Germany developed a high-speed CMOS image sensor

China Education Equipment Purchasing Network News: According to Xinhuanet ’s recent news, CMOS image sensors commonly used in digital photography cameras often perform poorly in low light conditions. The German Fraunhofer Association for Applied Research Promotion recently introduced a retrofit CMOS sensors with specific optoelectronic components overcome this problem.

The research institute recently issued a statement saying that researchers have successfully placed a component called a "lateral drift electric field photodetector" into a CMOS image sensor, thereby greatly increasing the speed of data reading. This technology has already applied for a patent.

At this stage, CMOS image sensors have gradually occupied the digital photography market, and more and more mobile phones and digital cameras use CMOS chips. Compared with CCD image sensors, CMOS sensors have many advantages such as low cost, low power consumption, and easy driving.

However, CMOS image sensors also have their weaknesses, that is, in poor light conditions, the image sensing effect will be greatly deteriorated. Therefore, in specific fields such as astronomy and X-ray photography, larger pixels need to be used to compensate for the lack of light. But large pixels will affect the data reading speed.

Experts of the Fraunhofer Association said that the use of photoelectric elements "lateral drift electric field photodetectors" can increase the reading speed of CMOS sensors by a factor of 100. This technology has broad application prospects in areas requiring large pixels and high reading speeds.

It is reported that samples of high-speed CMOS image sensors have been completed at present, and mass production is expected to be achieved next year.

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